2007-04-20 1 bfn24, bfn26 1 2 3 npn silicon high-voltage transistors ? suitable for video output stages in tv sets and switching power supplies ? high breakdown voltage ? low collector-emitter saturation voltage ? complementary type: bfn27 (pnp) ? pb-free (rohs compliant) package 1) ? qualified according aec q101 type marking pin configuration package bfn24 bfn26 fhs fjs 1=b 1=b 2=e 2=e 3=c 3=c sot23 sot23 maximum ratings parameter symbol value unit collector-emitter voltage bfn24 bfn26 v ceo 250 300 v collector-base voltage bfn24 bfn26 v cbo 250 300 emitter-base voltage v ebo 6 collector current i c 200 ma peak collector current i cm 500 base current i b 100 peak base current i bm 200 total power dissipation- t s 74 c p tot 360 mw junction temperature t j 150 c storage temperature t stg -65 ... 150 1 pb-containing package may be available upon special request
2007-04-20 2 bfn24, bfn26 thermal resistance parameter symbol value unit junction - soldering point 1) r thjs 210 k/w electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 , bfn24 i c = 1 ma, i b = 0 , bfn26 v (br)ceo 250 300 - - - - v collector-base breakdown voltage i c = 100 a, i e = 0 , bfn24 i c = 100 a, i e = 0 , bfn26 v (br)cbo 250 300 - - - - emitter-base breakdown voltage i e = 100 a, i c = 0 v (br)ebo 6 - - collector-base cutoff current v cb = 200 v, i e = 0 , bfn24 v cb = 250 v, i e = 0 , bfn26 v cb = 200 v, i e = 0 , t a = 150 c, bfn24 v cb = 250 v, i e = 0 , t a = 150 c, bfn26 i cbo - - - - - - - - 0.1 0.1 20 20 a emitter-base cutoff current v eb = 5 v, i c = 0 i ebo - - 100 na dc current gain 2) i c = 1 ma, v ce = 10 v i c = 10 ma, v ce = 10 v i c = 30 ma, v ce = 10 v, bfn24 i c = 30 ma, v ce = 10 v, bfn26 h fe 25 40 40 30 - - - - - - - - - collector-emitter saturation voltage 2) i c = 20 ma, i b = 2 ma, bfn24 i c = 20 ma, i b = 2 ma, bfn26 v cesat - - - - 0.4 0.5 v base emitter saturation voltage 2) i c = 20 ma, i b = 2 ma v besat - - 0.9 1 for calculation of r thja please refer to application note thermal resistance 2 pulse test: t < 300s; d < 2%
2007-04-20 3 bfn24, bfn26 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics transition frequency i c = 20 ma, v ce = 10 v, f = 20 mhz f t - 70 - mhz collector-base capacitance v cb = 30 v, f = 1 mhz c cb - 1.5 - pf
2007-04-20 4 bfn24, bfn26 dc current gain h fe = ? ( i c ) v ce = 10 v ehp00627 bfn 24/26 10 10 ma h c 10 5 fe 10 3 1 10 0 5 10 10 10 -1 0 1 2 3 5 10 2 555 2 2 2 operating range i c = ? ( v ceo ) t a = 25c, d = 0 ehp00624 bfn 24/26 10 10 v ceo 10 c 10 3 1 10 -1 5 10 10 10 0 5 v ma 5 10 2 0123 555 10 100 1 100 500 dc ms ms ms s s collector current i c = ? ( v be ) v ce = 10 v ehp00625 bfn 24/26 10 0 v be 1.5 c 10 3 1 10 -1 5 0.5 1.0 10 0 5 v ma 5 10 2 collector cutoff current i cbo = ? ( t a ) v cb = 200 v ehp00626 bfn 24/26 10 0 ?c a 150 cb0 10 4 1 10 -1 5 50 100 5 10 2 10 0 5 t na max typ 5 10 3
2007-04-20 5 bfn24, bfn26 transition frequency f t = ? ( i c ) v ce = parameter in v, f = 2 ghz ehp00622 bfn 24/26 10 mhz 10 10 ma f c 10 10 t 555 0123 10 3 2 10 1 5 collector-base capacitance c cb = ? ( v cb ) emitter-base capacitance c eb = ? ( v eb ) 0 4 8 12 16 v 22 v cb ( v eb ) 0 10 20 30 40 50 60 70 pf 90 c cb ( c eb ) ccb ceb total power dissipation p tot = ? ( t s ) 0 15 30 45 60 75 90 105 120 c 150 t s 0 50 100 150 200 250 300 mw 400 p tot permissible pulse load p totmax / p totdc = ? ( t p ) 10 ehp00623 bfn 24/26 -6 0 10 5 d = 5 10 1 5 10 2 3 10 10 -5 10 -4 10 -3 10 -2 10 0 s 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t p = d t t p t tot max tot p dc p p t
2007-04-20 6 bfn24, bfn26 package sot23 package outline foot print marking layout (example) standard packing reel ?180 mm = 3.000 pieces/reel reel ?330 mm = 10.000 pieces/reel eh s bcw66 type code pin 1 0.8 0.9 0.9 1.3 0.8 1.2 0.25 m bc 1.9 -0.05 +0.1 0.4 0.1 2.9 0.95 c b 0...8? 0.2 a 0.1 max. 10? max. 0.08...0.15 1.3 0.1 10? max. m 2.4 0.15 0.1 1 a 0.15 min. 1) 1) lead width can be 0.6 max. in dambar area 12 3 3.15 4 2.65 2.13 0.9 8 0.2 1.15 pin 1 manufacturer 2005, june date code (ym)
2007-04-20 7 bfn24, bfn26 edition 2006-02-01 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2007. all rights reserved. attention please! the information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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